Author:
Marshall E.D.,Lau S.S.,Palmstrøm C.J.,Sands T.,Schwartz C.L.,Schwarz S.A.,Harbison J.P.,Florez L.T.
Abstract
ABSTRACTAnnealed Ge/Pd/n-GaAs samples utilizing substrates with superlattice marker layers have been analyzed using high resolution backside secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Interfacial compositional and microstructural changes have been correlated with changes in contact resistivity. The onset of good ohmic behavior is correlated with the decomposition of an intermediate epitaxial Pd4(GaAs,Ge2) phase and solid-phase regrowth of Ge-incorporated GaAs followed by growth of a thin Ge epitaxial layer.
Publisher
Springer Science and Business Media LLC
Cited by
21 articles.
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