Rheed Observation of Lattice Relaxation During Ge/Si(O01) Heteroepitaxy-Reference-Cited by-同舟云学术

Rheed Observation of Lattice Relaxation During Ge/Si(O01) Heteroepitaxy

Published:1989 Issue: Volume:148 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Miki Kazushi,Sakamoto Kunihiro,Sakamoto Tsunenori

Abstract

ABSTRACTWe report the dynamic RHEED (reflection high energy electron diffraction) observation during Ge/Si(001) heteroepitaxy at various growth temperatures. The RHEED intensityanalysis and the in-plane lattice constant analysis reveal a growth fashion and lattice relaxation. Both of them depend strongly on growth temperature.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference6 articles.

1. Lattice relaxation of InAs heteroepitaxy on GaAs

2. InxGa1−xAs−InyGa1−yAsstrained-layer superlattices: A proposal for useful, new electronic materials

3. Ge‐Si layered structures: Artificial crystals and complex cell ordered superlattices

4. RHEED-intensity oscillations of alternating surface reconstructions during Si MBE growth on single-domain Si(001)-2×1 surface

5. Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100);Journal of Crystal Growth;2017-01

2. In situ observation of low temperature growth of Ge on Si(1 1 1) by reflection high energy electron diffraction;Applied Surface Science;2016-05

3. Extremely dense arrays of germanium and silicon nanostructures;Physics-Uspekhi;2008

4. Structural and photoluminescence properties of Ge Si ultra-thin films and heterostructures;Journal of Physics: Condensed Matter;2002-08-22

5. Extended solid-on-solid model for heteroepitaxial growth;Surface Science;1999-09