RHEED-intensity oscillations of alternating surface reconstructions during Si MBE growth on single-domain Si(001)-2×1 surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Dynamics of film growth of GaAs by MBE from Rheed observations
2. Damped oscillations in reflection high energy electron diffraction during GaAs MBE
3. RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)
4. Observations on intensity oscillations in reflection high‐energy electron diffraction during epitaxial growth of Si(001) and Ge(001)
5. Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth
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5. Anti-domain-free GaP, grown in atomically flat (001) Si sub-μm-sized openings;Applied Physics Letters;2002-06-17
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