Growth of Gaas on Si Using Algap Intermediate Layer

Author:

Noto N.,Nozaki S.,Egawa T.,Soga T.,Jimbo T.,Umeno K.

Abstract

ABSTRACTWe have studied heteroepitaxial growth of GaAs on Si using an AlxGa1−xP intermediate layer in an atmospheric-pressure metal organic chemical vapor deposition (NOCVD) reactor. The crystallinity of the GaAs layer depends on AlP composition(x) of the intermediate layer. The bett crystal quality of GaAs layer is obtained when the AlP composition(x) of the intermediate layer is close to 0.5. The X-ray FWHX of 180 arcs and the etch pit density (EPD) of 2.5 × 107cm−2 were obtained in this GaAs/AlGaP/Si structure.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Deposition of (Multiple Junction) Semiconductor Surfaces;Encyclopedia of Electrochemistry;2002-01-29

2. Heteroepitaxial technologies of III–V on Si;Solar Energy Materials and Solar Cells;2001-02

3. High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer;physica status solidi (a);1999-11

4. Crystal growth mechanisms in III-V/Si heteroepitaxy;Advances in the Understanding of Crystal Growth Mechanisms;1999

5. Characterization of single quantum wells on GaAs/Si grown by metalorganic chemical vapor deposition;IEEE Photonics Technology Letters;1994-02

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