Monitoring SIMOX Layer Properties and Implantation Temperature by Optical Measurements-Reference-Cited by-同舟云学术

Monitoring SIMOX Layer Properties and Implantation Temperature by Optical Measurements

Published:1987 Issue: Volume:107 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Harbeke Guenther,Steigmeier E.F.,Hemment Peter L.F.,Reeson Karen J.,Jastrzebski Lubek

Abstract

AbstractInfrared absorption and Raman scattering measurements of SIMOX structures implanted at various temperatures yield information on the structure and the strain in both the top silicon and the buried oxide layers. Both techniques can also be used to monitor the implant temperature after the implantation.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

1. Formation of buried oxide layers by high dose implantation of oxygen ions in silicon

2. A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation Temperatures

3. Surface restoration of oxygen‐implanted silicon

4. 8 Steigmeier E.F. , (private communication).

5. Dependence of silicon‐on‐insulator transistor parameters on oxygen implantation temperature

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared analysis of buried insulator layers formed by ion implantation into silicon;Applied Surface Science;1993-01

2. Infrared analysis of buried insulator layers formed by ion implantation into silicon;Semiconductor Materials Analysis and Fabrication Process Control;1993

3. Optical characterization of silicon‐on‐insulator material obtained by sequential implantation and annealing;Applied Physics Letters;1990-12-03