An In-Situ TEM-Cathodoluminescence Study of Electron Beam Degradation of Luminescence from GaN and In0.1Ga0.9N Quantum Wells-Reference-Cited by-同舟云学术

An In-Situ TEM-Cathodoluminescence Study of Electron Beam Degradation of Luminescence from GaN and In0.1Ga0.9N Quantum Wells

Published:2002 Issue: Volume:743 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Boyall Nicholas M.,Durose Ken,Watson Ian M.

Abstract

ABSTRACTThe effect of electron beam irradiation on the cathodoluminescence (CL) emission from In0.1Ga0.9N/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the In0.1Ga0.9N and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference17 articles.

1. Transmission electron microscopic study of defect formation within II–VI compounds irradiated with 100 keV electrons

2. The chemical effects of ionizing radiation on non-metallic crystals

3. Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope

4. Cathodoluminescence and polarization studies from individual dislocations in diamond

5. Nonradiative Recombination at Dislocations in III-V Compound Semiconductors

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