Author:
Lee C. D.,Feenstra R. M.,Shigiltchoff O.,Devaty R. P.,Choyke W. J.
Abstract
Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 0 0] and [1 1 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films on the vicinal substrates compared to singular substrates, for the same Ga/N flux ratio used during growth.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Cited by
11 articles.
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