Abstract
High-quality single crystals of 6H–SiC have been indented at 1170 °C in vacuum. A TEM study of the indented regions shows that a 6H → 3C polytypic transformation has occurred, further confirming that this phase transformation can be induced by an applied stress.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
38 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献