Author:
Lapiano-Smith D. A.,McFeely F. R.
Abstract
ABSTRACTThe room temperature chemisorption of disilane on Ge(100) and subsequent reaction at elevated temperatures was investigated by core level photoemission spectroscopy. At room temperature Si2H6 chemisorbs dissociatively on Ge(100) forming a surface populated largely by Si-H groups. Annealing the sample to 300°C effectively reduces the Si-H species to elemental Si. An additional anneal to 580°C promotes the diffusion of Si into the bulk and restores the Ge surface to an atomically clean state.
Publisher
Springer Science and Business Media LLC