Investigation of crystallographic properties of thin germanium crystals grown on silicon substrates by chemical vapor deposition-Reference-Cited by-同舟云学术

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Investigation of crystallographic properties of thin germanium crystals grown on silicon substrates by chemical vapor deposition

Published:1983-04 Issue:4 Volume:102 Page:327-343
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Aharoni Herzl,Durembergova Daria

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials;Klug,1954

2. X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials;Klug,1954

3. X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials;Klug,1954

4. Laue Atlas;Preuss,1974

5. X-Ray Powder Data File, ASTM, PA, Cards 4-0545, 5-0565.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Chemical Interaction of Disilane on Ge(100);MRS Proceedings;1992

2. Heteroepitaxial growth of Ge on (100) Si by ultrahigh vacuum, chemical vapor deposition;Applied Physics Letters;1991-12-30

3. Low-temperature heteroepitaxy of Ge on Si by GeH4 gas low-pressure chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-05

4. JWC TO JEANNIE WELSH;The Carlyle Letters Online;1990-01-01

5. References;Thin Films by Chemical Vapour Deposition;1990

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