Thermodynamic Considerations in Thin-Film Metallizations

Abstract

ABSTRACTThe drive to produce smaller devices in integrated circuits is wellknown. Concurrent with this drive is the need to incorporate new materials, such as silicides, as interconnects, diffusion barriers, and contacts. During circuit fabrication, these materials are in contact with other solids and gases at elevated temperatures. Consequently, reactions may occur which degrade the materials present. Since the reactions of interest typically involve three elements distributed in several phases, ternary phase diagrams are required to predict the occurrence of a reaction and the subsequent reaction products, or, conversely, the stability of the phases present. Hence, ternary diagrams can provide important guidance in the selection of optimal materials and the design of reliable processing schedules.