Author:
Theil J. A.,Lucovsky G.,Hattangady S. V.,Fountain G. G.,Markunas R. J.
Abstract
ABSTRACTConventional high temperature, >800°C, CVD processes, utilizing SiH2Ci2 promote selective deposition of c-Si onto c-Si, but not on SiO2 surfaces. We show that low temperature, 300°C remote PECVD, with rf-excited He plasmas, and SiH2Ci2 and H2 injected downstream, also selectively deposits c-Si on c-Si and not SiO2 surfaces. This preliminary study employs in-situ mass spectrometry, MS, to determine the species responsible for selective deposition process reaction pathways. These MS studies suggest that species responsible for film deposition are Si-containing fragments of the SiH2Ci2 molecule, e.g., SiH2Ci, SiCi2H, etc., while the species responsible for inhibiting deposition on the SiO2 surfaces are by-products of the break-up of the SiH2Ci2 molecule in the gas phase, e.g., H-atoms, HCI and H2Ci+ ions.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献