Cleaning Technologies using Electrolytic Ionized Water and Analysis Technology of Fine Structures for Next Generation Device Manufacturing

Author:

Aoki Hidemitsu,Yamasaki Shinya,Nakamori Masaharu,Aoto Nahomi,Yamanaka Koji,Imaoka Takashi,Futatsuki Takashi

Abstract

ABSTRACTTo reduce the consumption of chemicals and ultra pure water (UPW) in cleaning processes used in device manufacturing, we have developed wet processes that use electrolytic ionized water (EIW), which is generated by the electrolysis of a diluted electrolyte solution or UPW. EIW can be controlled for wide ranges of pH and oxidation-reduction potential. Anode EIW with diluted electrolyte, which has high oxidation potential, can remove metallic contamination such as Cu and Fe on Si surfaces. EIW contains less than 1/100 of the amount of chemicals contained in conventional cleaning solutions, thus drastically reduces chemical consumption in wet processes. Moreover, electrolyzed UPW can be used as a substitute for conventional UPW to achieve better rinsing characteristics. Electrolyzed UPW reduces the level of residual SO42− ions after SPM cleaning more efficiently than conventional UPW. Thus the amount of rinse water needed is reduce to 1/6 that of the conventional UPW rinse.We also developed a method for analyzing remaining metallic contamination and residual ions in deep-submicron-diameter holes with high aspect ratios. The method is based on conventional atomic absorption spectrometry (AAS), and uses device patterns with high density contact holes. With this method, metallic (Fe) contamination on the order of 1010 atoms/cm2 can be easily analyzed inside 0.1 μm-diameter holes with an aspect ratio of 10. The residual ions in the fine holes can also be detected by thermal desorption spectroscopy (TDS).

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference19 articles.

1. [18] Sakai , Proc. of Symp. on post-CMP Cleaning System on Semiconductor Manufacturing, p.169.

2. [13] Aoki H. , Yamasaki S. , and Aoto N. , Proc. of Int. Conf. on Solid State Devices and Materials, Yokohama, Aug. 1996, pp. 154–156.

3. [11] Yamanaka K. , Futatsuki T. , Aoki H. , Nakamori M. and Aoto N. , Proc. of Inter national Symposium on Semiconductor Manufacturing., Tokyo, 1996, pp. 200–203.

4. [9] Yamanaka K. , Imaoka T. , Futatsuki T. , Yamasaki S. , and Aoki H. , Proc. of Semiconductor Pure Water and Chemicals Conference, Santa Clara, Feb. 1995, pp. 1–22.

5. Wafer Treatment Using Electrolysis-Ionized Water

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3