Author:
Sapjeta J.,Boone T.,Rosamilia J. M.,Silverman P. J.,Sorsch T. W.,Timp G.,Weir B. E.
Abstract
ABSTRACTBy using a combination of smooth epi substrates (0.7 Å rms roughness),
in-situ UV/Cl2 processing, and rapid thermal oxidation, highly
reliable ultrathin gate oxides were produced with ≤ 1.0 Å rms interface
roughness.
Publisher
Springer Science and Business Media LLC
Cited by
10 articles.
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