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Electrically driven spin qubit based on valley mixing

Published:2017-02-02 Issue:7 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Huang Wister,Veldhorst Menno,Zimmerman Neil M.,Dzurak Andrew S.,Culcer Dimitrie

Funder

Australian Research Council

Army Research Office

Australian National Fabrication Facility

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.075403/fulltext

Reference45 articles.

1. Quantum computation with quantum dots

2. Dephasing time of GaAs electron-spin qubits coupled to a nuclear bath exceeding 200 μs

3. An addressable quantum dot qubit with fault-tolerant control-fidelity

4. Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot

5. A two-qubit logic gate in silicon

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1. Non-symmetric Pauli spin blockade in a silicon double quantum dot;npj Quantum Information;2024-03-06

2. Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries;Advanced Functional Materials;2024-01-10

3. Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling;npj Quantum Information;2023-10-23

4. Polarization-driven high Rabi frequency of piezotronic valley transistors;Nano Energy;2023-08

5. Nonlinear Response and Crosstalk of Electrically Driven Silicon Spin Qubits;Physical Review Applied;2023-04-25

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