Abstract
AbstractFor semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is a promising candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fully fabricated by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL), functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proofs-of-concept. Once the process is established, it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric fields and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range.
Funder
Agence Nationale de la Recherche
EC | Horizon 2020 Framework Programme
FRANCE 2030 PEPR PRESQUILE
Publisher
Springer Science and Business Media LLC
Subject
Computational Theory and Mathematics,Computer Networks and Communications,Statistical and Nonlinear Physics,Computer Science (miscellaneous)