Author:
Yu Jixin,Liu Lequn,Lyding Joseph W.
Abstract
ABSTRACTThe Si/SiO2 interface roughness has received tremendous interest due to its relation to channel mobility degradation and dielectric reliability. We have used ultra-high vacuum scanning tunneling microscopy to directly examine the Si/SiO2 interface and study the roughening effect caused by chemical etching. The rms-roughness extracted quantitatively from the STM topography was found to be doubled from 0.111nm to 0.232nm by the normal NH4OH/H2O2 treatment, and further increased to 0.285nm for additional etching steps. It was also found that there were no regular single steps on the SiO2/Si(100) interface.
Publisher
Springer Science and Business Media LLC