Monitoring Iron Contamination in Silicon by Surface Photovoltage and Correlation to Gate Oxide Integrity-Reference-Cited by-同舟云学术

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Monitoring Iron Contamination in Silicon by Surface Photovoltage and Correlation to Gate Oxide Integrity

Published:1993-01 Issue: Volume:315 Page:
ISSN:1946-4274
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Henley Worth B.,Jastrzebski Lubek,Haddad Nadim F.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference18 articles.

1. Breakdown in silicon oxides (II)—correlation with Fe precipitates

2. A fast, preparation‐free method to detect iron in silicon

3. Breakdown in silicon oxides (II)—correlation with Fe precipitates

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of techniques for detecting metal contamination in silicon wafers;Spectrochimica Acta Part B: Atomic Spectroscopy;2018-11

2. Surface Preparation;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

3. Dropping Mode Chemiluminescence System with a Poly(dimethylsiloxane) Cell for Applications to Semiconductor Processes;Analytical Sciences;2006

4. Cleaning;Encyclopedia of Materials: Science and Technology;2001

5. Iron contamination in silicon technology;Applied Physics A: Materials Science & Processing;2000-05-01

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