1/f Noise Measurements of Hydrogenated Amorphous Silicon-Carbon Alloys

Abstract

ABSTRACTMeasurements of the optical, electronic and 1/f noise properties for a series of n-type doped hydrogenated amorphous silicon carbide thin films with varying gas phase concentrations of CH4 are described. The increase in the optical absorption edge of the n-type a-SiCx:H films with the addition of carbon is slower than in p-type films. Studies of the variation in the non-Gaussian statistics which characterize the 1/f noise indicate that the disorder at the mobility edge is greater for films with higher carbon concentrations.