Wide band‐gap, fairly conductivep‐type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95655
Reference8 articles.
1. Properties and structure ofa‐SiC:H for high‐efficiencya‐Si solar cell
2. A MESFET model for circuit analysis
3. Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane
4. Photochemical vapor deposition of undoped andn‐type amorphous silicon films produced from disilane
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1. Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer;International Journal of Photoenergy;2012
2. Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD;Solar Energy Materials and Solar Cells;2008-05
3. Wide optical bandgap p-type μc-Si:Ox:H prepared by Cat-CVD and comparisons to p-type μc-Si:H;Thin Solid Films;2008-01
4. Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures;Japanese Journal of Applied Physics;2007-04-05
5. Effects of Composition on the Microstructures and Optical Properties of Hydrogenated Amorphous Silicon Carbide Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition;MRS Proceedings;1999
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