Topographic Kinetics and Practice of Low Angle Ion Beam Thinning

Abstract

AbstractThe thinning technique is based on a simple geometrical model, describing the changes in the surface topography during ion beam etching. A high ion beam density makes jt possible that a thinning with an incidence angle of 0.5–7° ( measured from the sample surface) can take place within a reasonable time. Our method is applicable to a wide range of materials and to XTEM preparation.