Infrared Absorption Studies of Thermal Donors in Silicon

Author:

Wagner Peter

Abstract

ABSTRACTInfrared absorption investigations of oxygen containing silicon reveal that the thermal donors generated by annealing around 450 °C consist of a series of shallow double donors with slightly differing ground state energies. The kinetics of formation and decay of these donors in samples with varying oxygen content annealed at temperatures between 460 and 600 °C support the relation of the thermal donors to aggregates of oxygen atoms. A preferential orientation of thermal donors induced by uniaxial stress during their growth demonstrates their low symmetry and extended defect-like nature. Optical cross sections evaluated by comparing IR-absorption spectra with resistivity measurements allow to estimate the concentrations of the different donors.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference35 articles.

1. Silicon–oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat‐treated oxygen‐containing silicon

2. 32. Zulehner W. , in Aggregation Phanmeana of Point Defects in Silicon, The Electrochemical Soc., Inc., Pennington, N.J., Proc. Vol.83-4, Sirtl E. , Goorissen J. , Eds.

3. 18. Wagner P. , Holm C. , in /11/, p.677

4. Influence of oxygen on silicon resistivity

5. 29. Oehrlein G.S. , Lindström J.L. , Cohen S.A. , in /11/, p.701

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3