Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450–650°C under hydrostatic pressure

Author:

Surma B.,Londos C.A.,Emtsev V.V.,Misiuk A.,Bukowski A.,Potsidi M.S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Oxygen defect processes in silicon and silicon germanium;Applied Physics Reviews;2015-06

2. Vacancy-oxygen defects in silicon: the impact of isovalent doping;Journal of Materials Science: Materials in Electronics;2014-04-26

3. Neutron irradiation defects in Czochralski silicon;physica status solidi (c);2009-03

4. IR Studies on the Interaction between Thermal and Radiation Defects in Silicon;Solid State Phenomena;2007-10

5. Radiation-induced donor generation in epitaxial and Cz diodes;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2005-10

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