Affiliation:
1. Athens University
2. SB RAS
3. Institute of Electron Technology
Abstract
Fast neutron irradiations on pre-treated Cz-grown silicon were carried out. The pretreatments
involved thermal anneals at 450 oC and 650 oC under high hydrostatic pressure. We
mainly examined, by means of IR spectroscopy, the effect of pre-treatments on the production of
the oxygen-vacancy (VO) pair. The amplitude of the VO band was found independent on the 450
oC treatment although the amplitudes of the TDs bands were reduced. On the other hand, the
amplitude of the VO band was found lower in the samples treated at 650 oC, indicating an influence
on the production of the oxygen-vacancy defects. The results are discussed and explanations are
suggested concerning possible interactions between thermal and radiation defects.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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