In Situ Ion Implantation for Quantitative SIMS Analysis-Reference-Cited by-同舟云学术

In Situ Ion Implantation for Quantitative SIMS Analysis

Published:1985 Issue: Volume:48 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Lareau Richard T.,Williams Peter

Abstract

ABSTRACTThe primary ion column of a secondary ion mass spectrometer (Cameca IMS 3f) has been used as an ion implanter to prepare calibrated standards, In situ for quantitative SIMS analysis, with an accuracy better than 10%. The technique has been used to determine oxygen concentrations in contaminated TiSi2 films by implanting a reference level of 18O into a portion of the film.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference9 articles.

1. [9] Any point in the central region of the raster over which the beam passes completely receives a dose which is the integral of the current over the beam profile. For a given total current in the beam, this integral is independent of the beam diameter.

2. Use of the IMS-3f High Mass Resolving Power

3. Ion implantation for in-situ quantitative ion microprobe analysis

4. Principles and Applications of a Dual Primary Ion Source and Mass Filter for an Ion Microanalyser

5. Quantitative SIMS analysis of hydrogenated amorphous silicon using superimposed deuterium implant standards

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative SIMS analysis of nitrogen using in situ internal implantation;Applied Surface Science;1999-05

2. Implanted standards for ion microanalysis of oxygen in beryllium;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-06