Reactive Deposition of a-Silicon and Si-Based Alloys

Abstract

ABSTRACTHigh photoconductive a-Si:H(F) and St-based alloys were prepared from “precursors” made by oxidation of silane with F2 or reduction of SiFn (n=1,2,) with atomic hydrogen. Both crystalline and amorphous silicon were prepared at will, in the latter case, by controlling the flow of hydrogen. A marked reduction in the localized states in the vicinity of valence band was eatablished in the a-Si:H(F) prepared under optimal condition. A novel photoconductive film with high photoconductive gain for near-tr light was successfully made by multiplying a-Si:H/a-SiGe:H(F) periodically by a new preparation technique without a rise in the dark conductivity.