Control of Chemical Reactions for Growth of Crystalline Si at Low Substrate Temperature

Abstract

AbstractA systematic study has been made on the formation of Si-network of amorphous(a-), microcrystalline(μc-) and epitaxial (epi)-Si prepared by Plasma-Enhaced (PE-) CVD under control of flow of atomic hydrogen. The control of the Si-network structures requires a deliberate selection of the precursor, i.e., SiHn (n≤53) and SiFnHm (n+m≤53), as well as an intentional acceleration of the chemical reactions for the propagation of Si-network in the vicinity of the growing surface by impinging of atomic hydrogen. A plausible interpretation was given to the growing mechanism of c-Si at low temperature.