Propagation of Si-Network in Hr-Cvd and Spontaneous Chemical Deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference14 articles.
1. The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys
2. Preparation of a-Si and its Related Materials by Hydrogen Radical Enhanced CVD
3. Reversible conductivity changes in discharge‐produced amorphous Si
4. Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250°C
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1. Low-temperature Growth of Poly-Si and SiGe Thin Films by Reactive Thermal CVD and Fabrication of High Mobility TFTs over 50 cm2/Vs;MRS Proceedings;2003
2. PLASMA DEPOSITION OF MICROCRYSTALLINE SILICON: THE ROLE OF PLASMA-SURFACE INTERACTION ON THE MICROSTRUCTURE;Handbook of Surfaces and Interfaces of Materials;2001
3. A selection rule in SiHn(n=1–4)+F reactions: An ab initio molecular orbital study;The Journal of Chemical Physics;1993-02-15
4. Control of nucleation and growth in the preparation of crystals by plasma-enhanced chemical vapour deposition;Philosophical Magazine B;1991-01
5. Studies of SiH2Ci2/H2 Gas Phase Chemistry for Selective Thin Film Growth of Crystalline Silicon, c-Si, Using Remote Plasma Enhanced Chemical Vapor Deposition;MRS Proceedings;1991
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