Double Channel AlGaN/GaN Heterostructure Field Effect Transistor-Reference-Cited by-同舟云学术

Double Channel AlGaN/GaN Heterostructure Field Effect Transistor

Published:1998 Issue: Volume:512 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Gaska R.,Shur M. S.,Yang J. W.,Fjeldly T. A.

Abstract

ABSTRACTWe report on a Double Channel A1GaN/GaN Heterostructure Field Effect Transistor, where the bottom channel is formed by a GaN-AlGaN-GaN Semiconductor-Insulator-Semiconductor structure. The series resistance for the bottom channel is strongly dependent on the drain bias. This new design demonstrates that the current carrying capability of AlGaN/GaN HFETs can be enhanced using multi channel structures.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference10 articles.

1. Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors

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4. The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructures

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4. GaN And Related Materials For High Power Applications;MRS Proceedings;1997