Stress and Microstructure in Phosphorus Doped Polycrystalline Silicon

Abstract

ABSTRACTThe research presented here is an investigation of the effects of phosphorus doping on residual stresses and microstructure in polycrystalline silicon. Undoped polycrystalline silicon films were deposited on phosphosilicate glass layers and annealed at 1050 °C for 5 to 60 minutes. The stress gradient through the film thickness was measured from wafer curvature, and microstructure was examined with cross-sectional TEM. A 20 minute anneal is sufficient for stress relief in initially tensile films and produces a uniform microstructure consisting of 0.1-0.2 µm equi-axed grains.