Chemical Vapor Deposition (CVD) of Parylene Films using Liquid Source Delivery

Abstract

AbstractParylene-N films were formed on silicon substrates at a substrate temperature of −20 °C and pressures from 4 - 7 torr via liquid source precursor delivery. [2.2 ] Paracyclophane, the precursor of parylene-N, was dissolved in an organic solvent and delivered into a vaporizer / pyrolysis unit. The solution was vaporized at ∼ 200 °C and its vapor was cracked at ∼ 700 °C to generate the reactive morromeric species. Films were grown by condensation and polymerization, and analyzed by infrared (FTIR), thermogravimetric analysis (TGA) and X-ray diffraction (XRD) analysis. These analyses indicated the formation of parylene-N films without detectable solvent contamination or incorporation into the polymeric films.