High Quality P-Type A-SiC Film Doped with B(Ch3)3 and its Application to A-Si Solar Cells-Reference-Cited by-同舟云学术

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High Quality P-Type A-SiC Film Doped with B(Ch3)3 and its Application to A-Si Solar Cells

Published:1988-01 Issue: Volume:118 Page:
ISSN:1946-4274
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Kuwano Yukinori,Tsuda Shinya

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference4 articles.

1. Laser Patterning Method for Integrated Type a-Si Solar Cell Submodules

2. Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma

3. High efficiency a-Si solar cells with a superlattice structure p-layer and stable a-Si solar cells with reduced SiH2 bond density

4. Preparation and Properties of High-Quality a-Si Films with a Super Chamber : Separated Ultra-High Vacuum Reaction Chamber

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3D impurity profiles of doped/intrinsic amorphous-silicon layers composing textured silicon heterojunction solar cells detected by atom probe tomography;Applied Physics Express;2020-12-01

2. Ausgewählte Festkörper mit nanokristallinen Strukturen;Nanotechnologie und Nanoprozesse;2016-05-09

3. Bandgap engineering of amorphous semiconductors for solar cell applications;Progress in Photovoltaics: Research and Applications;1995

4. Thin film technology based on hydrogenated amorphous silicon;Materials Science and Engineering: A;1991-07

5. Fabrication of a-Si:H electrophotographic photoreceptors by magnetron plasma CVD method;Journal of Non-Crystalline Solids;1989-12

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