Er-Doping of Gan and Related Alloys

Abstract

AbstractEr incorporation into GaN, AIN, MAIN and InGaN can be achieved using either direct ion implantation or by doping during Metal Organic Molecular Beam Epitaxy using metalorganic or elemental sources. When co-implanted with 0 and annealed between 600–800°C, strong luminescence at 1.54pm from optically excited Er3+ is detected in both binary nitrides and there was no measurable diffusion of Er in any of the materials. The low vapor pressures of the gaseous source compounds (erbium 2, 2, 2, 6-tetramethyl-3, 5-heptanedionate for Er + O; erbium bistrimethylsilylamide for Er) makes transport difficult unless high bubbler temperatures are used. Er concentrations up to ∼3×1021cm−3 in AIN have been obtained using a solid Er source. Microdisk laser structures with Er-doped active layers have been fabricated using a novel KOH selective wet etch and Cl2/CH4/H2/Ar dry etching.