Abstract
AbstractWe show that a careful examination of previous microscopic structural data from the Si/SiO2 interface reveals that the presence of an epitaxial interfacial oxide cannot be ruled out, and describe the conditions necessary for a definitive search for an intervening layer between c-Si and a-SiO2 We present electron diffraction and lattice imaging data, which establish the c-Si→a-SiO2 transition to take place via a crystalline layer ˜7 A thick. Modelling of lattice images in two projections indicates the crystalline oxide to be tridymite, a stable, bulk phase of SiO2
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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