Author:
Kudo J.,Nagata M.,Ogata N.,Yamazaki S.,Urashima H.,Okutoh A.,Miyoshi T.,Ishihara K.
Abstract
AbstractA high stability electrode technology with TaSiN as a barrier metal was used to fabricate a stacked SBT capacitor array on polySi plugs, and hysteresis characteristics and contact properties of the stacked capacitor were studied.
Publisher
Springer Science and Business Media LLC
Reference3 articles.
1. 1. Onishi S. , , IEDM Digest of Technical Papers, p.843,1994
2. 2. Kudo J. , , IEDM Digest of Technical Papers, p.609,1997
3. Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献