Crystallographic Orientation Dependent Ferroelectric Characteristics of (Bi3.3,La0.8)Ti3O12 (BLT) Capacitors-Reference-Cited by-同舟云学术

Crystallographic Orientation Dependent Ferroelectric Characteristics of (Bi3.3,La0.8)Ti3O12 (BLT) Capacitors

Published:2005-04-13 Issue:1 Volume:70 Page:89-97
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Kim Nam-Kyeong¹,Yeom Seung-Jin,Kweon Soon-Yong²,Choi Eun-Seok,Sun Ho-Jung,Sohn Hyun-Chul,Roh Jae-Sung

Affiliation:

1. a Memory R&D Division, Hynix Semiconductor, Inc., San 136-1, Ami-ri , Bubal-eup, , Ichon-si Kyoungki-do, 476-701, Korea

2. b Department of Materials Science & Engineering , Chung Jun National University, 123, Geomdan-ri Iryu-myeon , Chungju-si, Chungbuk, 380-720, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580490892854

Reference11 articles.

1. Fatigue-free ferroelectric capacitors with platinum electrodes

2. Ferroelectric Memories

3. Low temperature process for strontium bismuth tantalate thin films

4. A High Stability Electrode Technology for Stacked SrBi2Ta2O2 Capacitors

5. Lanthanum-substituted bismuth titanate for use in non-volatile memories

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