Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si-Reference-Cited by-同舟云学术

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Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si

Published:1991-06 Issue:6 Volume:12 Page:321-323
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kolawa E.,Pokela P.J.,Reid J.S.,Chen J.S.,Ruiz R.P.,Nicolet M.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/2693/00082074.pdf?arnumber=82074

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4. Impact of Metals on Silicon Devices and Circuits;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

5. A Study on the Long-Term Degradation of Crystalline Silicon Solar Cells Metallized with Cu Electroplating;ECS Journal of Solid State Science and Technology;2015-11-24

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