Epitaxial Monocrystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

Abstract

ABSTRACTMonocrystalline, epitaxial cubic (100) SiC films have been grown on monocrystalline (100) Si substrates at 750°C, the lowest epitaxial growth temperature reported to date. The films were grown by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus used in this study and the properties of the films.