Recent Advances Regarding the Definition of the Atomic Environment, Film Growth and Microelectronic Device Development in Silicon Carbide-Reference-Cited by-同舟云学术

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Recent Advances Regarding the Definition of the Atomic Environment, Film Growth and Microelectronic Device Development in Silicon Carbide

Published:1990 Issue: Volume: Page:589-623
ISSN:
Container-title:The Physics and Chemistry of Carbides, Nitrides and Borides
language:
Short-container-title:

Author:

Davis Robert F.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-009-2101-6_34.pdf

Reference104 articles.

1. Johnson, E.O. (1965), RCA Rev. 26, 163–175.

2. Keyes, R.W. (1972), Proc. IEEE 60, 225–236.

3. Jagodzinski, H. (1949), Acta. Crystallogr. 2, 201–215.

4. Ramsdell, R.S. (1947), Am. Min. 32, 64–88.

5. Zhadanov, G. R. (1945), C. R. Acad. Sci., SSSR,48, 39–55.

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1. Silicon Carbide- and Boron Carbide-Based Hard Materials;Ceramics Science and Technology;2014-05-23

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3. Microstructure of Cr-B Ohmic and Rectifying Contacts on (0001) 6H Sic;Microscopy and Microanalysis;1997-08

4. Application of SiC-Coatings Deposited by Dynamic Ion Mixing to the Improvement of Wear and Corrosion Resistance of Metallic Surfaces;Protective Coatings and Thin Films;1997

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