Low dislocation density GaAs grown by the vertical Bridgman technique

Abstract

We have developed a new growth process for GaAs that combines advantages found in several methods currently in commercial use, while at the same time minimizing many of the problems inherent in these presently used processes. The new technique, a form of vertical Bridgman (VB) growth, is capable of producing either doped (semiconducting) or undoped semi-insulating GaAs with very low dislocation density.