Growth of Semiinsulating GaAs Crystals by Vertical Gradient Freeze Technique-Reference-Cited by-同舟云学术

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Growth of Semiinsulating GaAs Crystals by Vertical Gradient Freeze Technique

Published:1995 Issue:7 Volume:30 Page:897-909
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Frank C.,Hein K.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference22 articles.

1. Growth and characterization of low defect GaAs by vertical gradient freeze

2. : Proc. 20th Int. Symp. Gallium Arsenide and Related Compounds, Freiburg, 1993, Institute of Physics, Conference Series No. 136, 1

3. : Halbleiter-Optoelektronik. Licensed edition of VEB Verlag Technik Berlin, Dr. Alfred Hüthing Verlag, Heidelberg 1986

4. The role of diffusion barrier temperature in gallium arsenide crystals grown by the gradient freeze method

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III Arsenide;Single Crystals of Electronic Materials;2019

2. New Developments in Vertical Gradient Freeze Growth;Advanced Engineering Materials;2004-07

3. Electronic properties of grown-in defects in semi-insulating GaAs;SPIE Proceedings;1999-04-08

4. Incorporation of Carbon by VGF-Growth of GaAs;Crystal Research and Technology;1999-02

5. Hall mobility lowering in undoped n-type bulk GaAs due to cellular-structure related nonuniformities;Journal of Applied Physics;1997-04

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