The role of crystal diameter and impurity hardening on the threshold for dislocation formation in LEC GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals
2. The theory and practice of dislocation reduction in GaAs and InP
3. presented at: SOTAPOCS-III/The Electrochem. Soc. Fall Meeting;Ozawa,1985
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5. Growth peculiarities of gallium arsenide single crystals
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Internal Stress Distribution Estimation in Liquid-Encapsulated Czochralski Grown GaAs Single Crystals Using Measured Temperature on Dummy Crystals;Japanese Journal of Applied Physics;1993-02-15
2. Meeting device needs through melt growth of large-diameter elemental and compound semiconductors;Progress in Crystal Growth and Characterization of Materials;1993-01
3. Chapter 7 Dislocations in III/V Compounds;Imperfections in III/V Materials;1993
4. Chapter 4 Mechanical Behavior of Compound Semiconductors;Semiconductors and Semimetals;1992
5. Thermal stress analysis of bulk single crystal during Czochralski growth (comparison between anisotropic analysis and isotropic analysis);Journal of Crystal Growth;1991-08
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