Author:
Shah Pankaj B.,Weil James,Birdwell A. Glen,Ivanov Tony
Abstract
AbstractCharge carrier trapping in diamond surface conduction field effect transistors (FETs) has been analyzed. For these devices two methods were used to obtain a negative electron affinity diamond surface; either plasma hydrogenation or annealing in an H2 environment. In both cases the Al2O3 gate dielectric can trap both electrons and holes in deep energy levels with emission timescales of seconds, while the diamond – Al2O3 interface traps exhibit much shorter time scales in the microsecond range. Capacitance-Voltage (CV) analysis indicates that these interface traps exhibit acceptor-like characteristics. Correlation with CV based free hole density measurements indicates that the conductance based interface trap analysis provides a method to quantify surface characteristics that lead to surface conduction in hydrogenated diamond where atmospheric adsorbates provide the acceptor states for transfer doping of the surface.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Y. Won, J. Cho, D. Agonafer, M. Asheghi, and K.E. Goodson, IEEE Trans. On Compon, Packag, and Manuf. Technol. 5, 737–744 (2015).
2. C.J.H. Wort, R. S. Balmer, Materials Today 11, 22–28 (2008).
3. M.V. Hauf, P. Simon, M. Seifert, A. W. Holleitner, M. Stutzmann, and J.A. Garrido, Phys. Rev. B 89, 115426–1 – 115426–5 (2014).
4. H. Kim, J. Lee, and W. Lu, Phys Stat. Sol. (a) 202, 841–845 (2005).
5. N. Madaan, S. S, Kanyal, D. S. Jessen, M.A. Vail, A.E. Dadson, M. H. Engelhard, H. Samha, and M.R. Linford, Surface Science Spectra 20, 43–48 (2013).
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献