Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures-Reference-Cited by-同舟云学术

Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures

Published:2020-09-21 Issue:12 Volume:117 Page:121901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mirabedini Pegah S.¹^ORCID,Debnath Bishwajit²^ORCID,Neupane Mahesh R.¹²³^ORCID,Alex Greaney P.¹⁴,Glen Birdwell A.³,Ruzmetov Dmitry³^ORCID,Crawford Kevin G.³^ORCID,Shah Pankaj³,Weil James³,Ivanov Tony. G.³

Affiliation:

1. Materials Science and Engineering Program, University of California, Riverside, California 92521, USA

2. Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, USA

3. CCDC U.S. Army Research Laboratory, Adelphi, Maryland 21005, USA

4. Department of Mechanical Engineering, University of California, Riverside, California 92521, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0020620

Reference59 articles.

1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

2. Gate interfacial layer in hydrogen-terminated diamond field-effect transistors

3. Concepts for diamond electronics

4. Origin of Surface Conductivity in Diamond

5. Surface transfer doping of diamond

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