Silicon Carbide Power Devices and Processing-Reference-Cited by-同舟云学术

Silicon Carbide Power Devices and Processing

Published:2003 Issue: Volume:764 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Casady J.B.,Bonds J.R.,Draper W.A.,Merrett J.N.,Sankin I.,Seale D.,Mazzola M.S.

Abstract

AbstractAn overview of silicon carbide (SiC) power device technology is given with an emphasis on processing issues and commercial applications. Schottky Barrier Diodes (SBDs) were the first to be made commercially available in 2001, with power switch and RF amplifiers soon to follow. This paper discusses the performance of current available rectifiers and published power switch development and identifies key issues in processing and device structures which have influenced past and will impact future SiC product development.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference38 articles.

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