On the Influence of Laser Beam Homogenity on the Regrowth of Ion Implanted Si

Abstract

ABSTRACTA simple method of improving laser beam homogenity has been developed. A cylindrical quartz pipe, acting as a lightguide, has been applied for dispersion of the components of the laser beam (microbeams), thus providing more uniform illumination of the sample's surface. The effects of such a homogenizer have been studied by means of X-ray transmission topography [4–5] and 2-MeV 4 He-ion channeling. The samples were ≤111≥ Si wafers implanted with 100 keV As and Bi ions to a dose of 1016 /cm2 . It has been observed that the shallow residual damage layer which exists in the directly irradiated samples is not present in the samples irradiatedthrough the homogenizer.