Cryogenic implantation to boost PFET performance and reduce variability in 3D NAND flows
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://link.springer.com/content/pdf/10.1557/s43580-022-00414-z.pdf
Reference9 articles.
1. A. Goda, Recent progress on 3D NAND flash technologies. Electronics 10, 3156 (2021). https://doi.org/10.3390/electronics10243156
2. F.A. Khaja et al., Physical understanding of cryogenic implant benefits for electrical junction stability. Appl. Phys. Lett. 100, 112102 (2012). https://doi.org/10.1063/1.3694275
3. X. Garros, Key low temperature processes for a silicon-based 3D sequential integration, in VLSI, SC1-3 (2022)
4. B. Colombeau et al., Advanced CMOS: challenges and implant solutions. Phys. Status Solidi A (2013). https://doi.org/10.1002/pssa.201300169
5. C.L. Yang et al., Suppressing device variability by cryogenic implant for 28nm low-power SoC applications. IEEE EDL 33, 1444–1446 (2012). https://doi.org/10.1109/LED.2012.2209395
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