Identity of the Nl8 Epr Spectrum with Thermal Donors in Silicon+-Reference-Cited by-同舟云学术

Identity of the Nl8 Epr Spectrum with Thermal Donors in Silicon+

Published:1985 Issue: Volume:46 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Lee Keon M.,Trombetta J. M.,Watkins G. D.

Abstract

AbstractThe effect of uniaxial stress on the NL8 EPR spectrum in 450°C heattreated silicon containing thermal donors (TD's) is described. Changes in the relative amplitudes of the NL8 spectral components are interpreted as arising from electronic redistribution between the differently oriented defects. These changes are consistent in sign and magnitude with those predicted for TD+ from observed stress effects on the TD IR and DLTS spectra.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference15 articles.

1. 9. Wagner P. and Holm C. , in 13th Int. Conf. on Defects in Semiconductors, op. cit., p. 677.

3. 12. Farmer J. W. , Meese J. M. , Henry P. M. , and Lamp C. D. , in 13th Int. Conf. on Defects in Semiconductors., op. cit., p. 639.

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