Diffusion Coefficient of Hydrogen in Silicon at an Intermediate Temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference17 articles.
1. Charge-state-dependent hydrogen-carbon-related deep donor in crystalline silicon
2. Chemical etching‐induced defects in phosphorus‐doped silicon
3. Hydrogen diffusion and the catalysis of enhanced oxygen diffusion in silicon at temperatures below 500 °C
4. Oxygen loss during thermal donor formation in Czochralski silicon: New insights into oxygen diffusion mechanisms
5. Enhanced thermal donor formation in silicon exposed to a hydrogen plasma
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