Shallow thermal donors associated with H, Al and N in annealed Czochralski silicon distinguished by infrared spectroscopy-Reference-Cited by-同舟云学术

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Shallow thermal donors associated with H, Al and N in annealed Czochralski silicon distinguished by infrared spectroscopy

Published:1997-11-01 Issue:11 Volume:12 Page:1404-1408
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Pritchard R E,Ashwin M J,Tucker J H,Newman R C,Lightowlers E C,Gregorkiewicz T,Zevenbergen I S,Ammerlaan C A J,Falster R,Binns M J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Thermal double donors in silicon

2. Observation of five additional thermal donor species TD12 to TD16 and of regrowth of thermal donors at initial stages of the new oxygen donor formation in Czochralski-grown silicon

3. Structure of thermal donors (NL8) in silicon: A study with electron-nuclear double resonance

4. Identity of the Nl8 Epr Spectrum with Thermal Donors in Silicon+

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1. Effect of carbon, oxygen, and intrinsic defects on hydrogen-related donor concentration in proton irradiated n-type silicon;Journal of Applied Physics;2021-09-21

2. Magnesium-related shallow donor centers in silicon;Materials Science in Semiconductor Processing;2021-08

3. Ground state of ultrashallow thermal donors in silicon;Japanese Journal of Applied Physics;2018-09-04

4. Ground-state splitting of ultrashallow thermal donors with negative central-cell corrections in silicon;Japanese Journal of Applied Physics;2017-05-17

5. Mechanism of formation of ultrashallow thermal donors in carbon-doped oxygen-rich monocrystalline silicon preannealed to introduce hydrogen;Japanese Journal of Applied Physics;2015-09-18

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